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| Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1395 REPETETIVE AVALANCHE AND dv/dt RATED HEXFET(R) TRANSISTOR IRHM9230 P-CHANNEL RAD HARD Product Summary Part Number IRHM9230 BVDSS -200V RDS(on) 0.8 ID -6.5A -200 Volt, 0.8 , RAD HARD HEXFET International Rectifier's P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 105 Rads (Si). Under identical pre- and post-radiation test conditions, International Rectifier's P-Channel RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Single Event Effect (SEE) testing of International Rectifier P-Channel RAD HARD HEXFETs has demonstrated virtual immunity to SEE failure. Since the P-Channel RAD HARD process utilizes International Rectifier's patented HEXFET technology, the user can expect the highest quality and reliability in the industry. P-Channel RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control,very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments. Features: s s s s s s s s s s s s Radiation Hardened up to 1 x 105 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets s Electrically Isolated Absolute Maximum Ratings Parameter I D @ VGS = -12V, TC = 25C Continuous Drain Current ID @ VGS = -12V, TC = 100C Continuous Drain Current IDM Pulsed Drain Current PD @ TC = 25C VGS EAS I AR EAR dv/dt TJ TSTG Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight Notes: See page 4 Pre-Radiation IRHM9230 -6.5 -4.1 -26 75 0.2 20 330 -6.5 7.5 -5.0 -55 to 150 oC Units A W W/K V mJ A mJ V/ns 300 (0.063 in. (1 .6mm) from case for 10s) 9.3 (typical) g To Order Previous Datasheet IRHM9230 Device Index Next Data Sheet Pre-Radiation Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage BVDSS/TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min. -200 -- -- -- -2.0 2.2 -- -- -- -- -- -- -- -- -- -- -- -- Typ. Max. Units -- -0.10 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 5.0 -- -- V V/C Test Conditions VGS = 0V, I D = -1.0 mA Reference to 25C, ID = -1.0 mA IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance 0.8 VGS = -12V, I D = -4.1A 0.92 VGS = -12V, I D = -6.5A -4.0 V VDS = VGS, ID = -1.0 mA -- S( ) VDS > -15V, I DS = -6.5A -25 A VDS = 0.8 x Max. Rating,VGS = 0V -250 VDS = 0.8 x Max. Rating VGS = 0V, TJ = 125C -100 VGS = -20V nA 100 VGS = 20V 35 VGS = -12V, I D = -6.5A nC 10 VDS = Max. Rating x 0.5 25 50 VDD = -100V, ID = -6.5A, RG = 2.35 90 ns 90 90 Measured from the Modified MOSFET -- nH LS Internal Source Inductance -- 15 -- Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance -- -- -- 1100 310 55 -- -- -- pF Source-Drain Diode Ratings and Characteristics Parameter IS I SM VSD t rr QRR t on Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units -- -- -- -- -6.5 -26 A -- -- -5.0 V Tj = 25C, IS = -6.5A, VGS = 0V -- -- 400 ns Tj = 25C, IF = -6.5A, di/dt -100 A/s -- -- 3.0 C VDD -50V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthJA Junction-to-Case Junction-to-Ambient Min. Typ. Max. Units -- -- -- 30 1.67 K/W -- Notes: See page 4 To Order drain lead, 6mm (0.25 in.) from package to center of die. symbol showing the internal inductances. Measured from the source lead, 6mm (0.25 in.) from package to source bonding pad. VGS = 0V, VDS = -25V f = 1.0 MHz Test Conditions Modified MOSFET symbol showing the integral Reverse p-n junction rectifier. Test Conditions Previous Datasheet IRHM9230 Device Radiation Performance of P-Channel Rad Hard HEXFETs Index Next Data Sheet Radiation Characteristics International Rectifier Radiation Hardened HEXFETs are tested to verify their hardness capability. The hardness assurance program at International Rectifier uses two radiation environments. Every manufacturing lot is tested in a low dose rate (total dose) environment per MlL-STD-750, test method 1019. International Rectifier has imposed a standard gate voltage of -12 volts per note 6 and a VDSS bias condition equal to 80% of the device rated voltage per note 7. Pre- and post-radiation limits of the devices irradiated to 1 x 105 Rads (Si) are identical and are presented in Table 1. The values in Table 1 will be met for either of the two low dose rate test circuits that are used. Both pre- and post-radiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. It should be noted that at a radiation level of 1 x 105 Rads (Si), no change in limits are specified in DC parameters. High dose rate testing may be done on a special request basis, using a dose rate up to 1 x 1012 Rads (Si)/Sec. International Rectifier radiation hardened P-Channel HEXFETs are considered to be neutron-tolerant, as stated in MIL-PRF-19500 Group D. International Rectifier PChannel radiation hardened HEXFETs have been characterized in heavy ion Single Event Effects environment and the results are shown in Table 3. Table 1. Low Dose Rate Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on)1 VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance One Diode Forward Voltage IRHM9230 100K Rads (Si) min. -200 -2.0 -- -- -- -- -- max. -- -4.0 -100 100 -25 0.8 -5.0 Units V nA A V Test Conditions VGS = 0V, ID = -1.0 mA VGS = VDS, ID = -1.0 mA VGS = -20V VGS = 20V VDS = 0.8 x Max Rating, VGS = 0V VGS = -12V, ID = -4.1A TC = 25C, IS = -6.5A,VGS = 0V Table 2. High Dose Rate Parameter VDSS IPP di/dt L1 Drain-to-Source Voltage 1011 Rads (Si)/sec1012 Rads (Si)/sec -- -- -- 1 -- -160 -- -- -160 -- -- Min. Typ Max. Min.Typ. Max. Units V -100 -- -800 -- -- -- -- -100 -- -160 20 -- Test Conditions Applied drain-to-source voltage during gamma-dot A Peak radiation induced photo-current A/sec Rate of rise of photo-current H Circuit inductance required to limit di/dt Table 3. Single Event Effects Parameter BV DSS Typ. -200 Units V Ion Ni LET (Si) (MeV/mg/cm2) 28 Fluence (ions/cm2) 1 x 105 Range (m) ~41 VDS Bias (V) -200 VGS Bias (V) 5 To Order Previous Datasheet IRHM9230 Device Repetitive Rating; Pulse width limited by maximum junction temperature. Refer to current HEXFET reliability report. @ VDD = -50V, Starting TJ = 25C, EAS = [0.5 * L * (IL2) * [BVDSS/(BVDSS-VDD)] Peak IL = -6.5A, VGS = -12V, 25 RG 200 ISD -6.5A, di/dt -140 A/s, VDD BVDSS, TJ 150C Suggested RG = 2.35 Pulse width 300 s; Duty Cycle 2% Index Next Data Sheet Radiation Characteristics Total Dose Irradiation with VGS Bias. -12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019. Total Dose Irradiation with VDS Bias. VDS = 0.8 rated BVDSS (pre-radiation) applied and VGS = 0 during irradiation per MlL-STD-750, method 1019. This test is performed using a flash x-ray source operated in the e-beam mode (energy ~2.5 MeV), 30 nsec pulse. Process characterized by independent laboratory. All Pre-Radiation and Post-Radiation test conditions are identical to facilitate direct comparison for circuit applications. K/W = C/W W/K = W/C Case Outline and Dimensions Optional leadforms for outline TO-254 LEGEND 1 DRAIN 2 SOURCE 3 GATE LEGEND 1 DRAIN 2 SOURCE 3 GATE NOTES: 1 DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982 2 ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES) NOTES: 1 DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982 2 ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES) 3 LEADFORM IS AVAILABLE IN EITHER ORIENTATION: Example: 3.1 IRHM7160D 3.2 IRHM7160U Conforms to JEDEC Outline TO-254AA Dimensions in Millimeters and (Inches) CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Packages containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: 171 (K&H Bldg.),30-4 Nishi-ikebukuro 3-Chome, Toshima-ku, Tokyo Japan Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 4/96 To Order |
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